2N3903 / 2n3904 npn silicon epitaxial planar transistor for switching and amplifier applications. as complementary types the pnp transistors 2n3905 and 2n3906 are recommended. on special request, thes e transistors can be manufactured in different pin configurations. absolute maximum ratings (t a = 25 o c) parameter symbol value unit collector base voltage v cbo 60 v collector emitter voltage v ceo 40 v emitter base voltage v ebo 6 v collector current i c 200 ma power dissipation p tot 625 mw junction temperature t j 150 o c storage temperature range t s - 55 to + 150 o c 1. emitter 2. base 3. collector to-92 plastic package weight approx. 0.19g
2N3903 / 2n3904 characteristics at t a = 25 o c parameter symbol min. max. unit dc current gain at v ce = 1 v, i c = 0.1 ma at v ce = 1 v, i c = 1 ma at v ce = 1 v, i c = 10 ma at v ce = 1 v, i c = 50 ma at v ce = 1 v, i c = 100 ma 2N3903 2n3904 2N3903 2n3904 2N3903 2n3904 2N3903 2n3904 2N3903 2n3904 h fe h fe h fe h fe h fe h fe h fe h fe h fe h fe 20 40 35 70 50 100 30 60 15 30 - - - - 150 300 - - - - - - - - - - - - - - collector cutoff current at v cb = 30 v i cbo - 50 na emitter cutoff current at v eb = 6 v i ebo - 50 na collector base breakdown voltage at i c = 10 a v (br)cbo 60 - v collector emitter breakdown voltage at i c = 1 ma v (br)ceo 40 - v emitter base breakdown voltage at i e = 10 a v (br)ebo 6 - v collector emitter saturation voltage at i c = 10 ma, i b = 1 ma at i c = 50 ma, i b = 5 ma v cesat v cesat - - 0.2 0.3 v v base emitter saturation voltage at i c = 10 ma, i b = 1 ma at i c = 50 ma, i b = 5 ma v besat v besat - - 0.85 0.95 v v gain bandwidth product at v ce = 20 v, i c = 10 ma, f = 100 mhz 2N3903 2n3904 f t f t 250 300 - - mhz mhz collector base capacitance at v cb = 5 v, f = 100 khz c cb - 4 pf emitter base capacitance at v eb = 0.5 v, f = 100 khz c eb - 8 pf thermal resistance junction to ambient r tha - 250 1) k/w 1) valid provided that leads are kept at ambient temperature at a distance of 2 mm from case
2N3903 / 2n3904 v ce ( v ) 7 0 0.01 0.2 0.4 0.3 i b (ma) 0.070.030.02 0.05 0.1 0.2 10ma 0.70.5 1 3 25 10 v ce = 1v t j = 25c 0.3 hfe (normalized) i c =1ma 0.6 0.8 1 0.1 0.1 0.2 30ma collector saturation region 100ma i c (ma) 32 0.7 0.5 0.30.2 1 70 50 30 20 75 100 10 1 0.5 0.7 2 -55c dc current gain 25c t j =125c 200
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